The following item consists of two statements, one labeled as the 'Statement (I)' and the other as 'Statement (II)'. Examine these two statements carefully and select the answers to these items using the codes given below: Statement (I): MOSFET is a field-effect transistor whose drain current is controlled by the voltage applied at the gate. Statement (II): MOSFET is an insulated gate FET. Codes: Correct Answer Both Statement (I) and Statement (II) are individually true but Statement (II) is NOT the correct explanation of Statement (I), Both Statement (I) and Statement (II) are individually true but Statement (II) is NOT the correct explanation of Statement (I) MOSFET transistor is a semiconductor device which is used for amplifying and switching electronic signals in electronic devices. MOSFET is a metal oxide semiconductor field-effect transistor in which drain current varies in proportion to the VGS (Gate Voltage). (Statement 1 is correct) The input resistance of a MOSFET is several orders of magnitude greater than that of JFET. As there exists an oxide layer between Gate and channel which is a complete insulator. Hence it is called as insulated FET. (Statement 2 is also correct) Both the statements are independently true, but Statement 2 is not the correct explanation of Statement 1. Working: n-MOS is shown below: If we apply a potential source between the drain and the source, no current will flow as there is no conducting path between the drain and the source. To provide the conducting path between the drain and the source, we apply a positive potential at the gate. On applying positive potential, there is an induced electric field at the semiconductor surface below the oxide, trapping the electrons (minority carrier of the p-type substrate). This results in the formation of a conducting path channel between the drain and the source. An enhancement type of MOSFET has three regions, i.e. accumulation, depletion, and inversion. VGS 0 GS T : Depletion VGS > VT: Inversion (Conduction) ​[ alt="F2 R.D N.J 28.08.2019 D 2" src="//storage.googleapis.com/tb-img/production/19/10/F2_R.D_N.J_28.08.2019_D%202.png" style="width: 258px; height: 272px;">