Match List I with List II List I (Diffusion profile measurement technique) List II (Characteristics) A. Capacitance - voltage 1. Not suitable for diffusion studies in VLSI process when shallow junction profiles are of interest B. Differential - conductance 2. Needs Van dc graff generator C. Spreading resistance 3. Two–point probe arrangement D. RBS 4. Concentration near the junction space-charge region at zero bias cannot be measured Choose the correct answer from the options given below: Correct Answer A - 4, B - 1, C - 3, D - 2 Concept: Capacitance-voltage (C-V) measurement is done by using a capacitance-voltage meter of electronic instrumentation. They are used to analyze the doping profile of semiconductor devices by obtaining the C-V graph. Differential conductance: It is performed to measure the electron energy structure of small devices such as quantum dots, nanoparticles, or artificial atoms. It is suitable for differential studies in the VLSI process when shallow junction profiles are of interest. b → (1) Two-point probe measurements: It consists of the application of an electrical current between two prove a few centimeters apart, and the measurement of the potential difference between these same two points. c → (iii) Spreading resistance profiling (SRP): It is a technique used to analyze resistivity versus depth in the semiconductor. Semiconductors depend on the distribution of carriers with their structure to provide the desired performance. Two-point probe method: It consists of the application of an electrical current between the two probes and measure the potential difference between the same two probes. 4) RBS Needs a Van-de graft generator. So option (2) correct.